Interactive holography offers unmatched levels of immersion and user engagement in the field of future display. Despite of the substantial progress has been made in dynamic meta-holography, the realization of real-time, highly smooth interactive holography remains a significant challenge due to the computational and display frame rate limitations. In this study, we introduced a dynamic interactive bitwise meta-holography with ultra-high computational and display frame rates. To our knowledge, this is the first reported practical dynamic interactive metasurface holographic system. We spatially divided the metasurface device into multiple distinct channels, each projecting a reconstructed sub-pattern. The switching states of these channels were mapped to bitwise operations on a set of bit values, which avoids complex hologram computations, enabling an ultra-high computational frame rate. Our approach achieves a computational frame rate of 800 kHz and a display frame rate of 23 kHz on a low-power Raspberry Pi computational platform. According to this methodology, we demonstrated an interactive dynamic holographic Tetris game system that allows interactive gameplay, color display, and on-the-fly hologram creation. Our technology presents an inspiration for advanced dynamic meta-holography, which is promising for a broad range of applications including advanced human-computer interaction, real-time 3D visualization, and next-generation virtual and augmented reality systems.

Recently, the emerging 2 μm waveband has gained increasing interest due to its great potential for a wide scope of applications. Compared with the existing optical communication windows at shorter wavelengths, it also offers distinct advantages of lower nonlinear absorption, better fabrication tolerance, and larger free carrier plasma effects for silicon photonics, which has been a proven device technology. While much progress has been witnessed for silicon photonics at the 2 μm waveband, the primary challenge still exists for on-chip detectors. Despite the maturity and compatibility of the waveguide coupled photodetectors made of germanium, the 2 μm regime is far beyond its cutoff wavelength. In this work, we demonstrate an efficient and high-speed on-chip waveguide-coupled germanium photodetector operating at the 2 μm waveband. The weak sub-bandgap absorption of epitaxial germanium is greatly enhanced by a lateral separation absorption charge multiplication structure. The detector is fabricated by the standard process offered by a commercial foundry. The device has a benchmark performance with responsivity of 1.05 A/W and 3 dB bandwidth of 7.12 GHz, which is able to receive high-speed signals with up to 20 Gbit/s data rate. The availability of such an efficient and fast on-chip detector circumvents the barriers between silicon photonic integrated circuits and the potential applications at the 2 μm waveband.

Inverse design focuses on identifying photonic structures to optimize the performance of photonic devices. Conventional scalar-based inverse design approaches are insufficient to design photonic devices of anisotropic materials such as lithium niobate (LN). To the best of our knowledge, this work proposes for the first time the inverse design method for anisotropic materials to optimize the structure of anisotropic-material based photonics devices. Specifically, the orientation dependent properties of anisotropic materials are included in the adjoint method, which provides a more precise prediction of light propagation within such materials. The proposed method is used to design ultra-compact wavelength division demultiplexers in the X-cut thin-film lithium niobate (TFLN) platform. By benchmarking the device performances of our method with those of classical scalar-based inverse design, we demonstrate that this method properly addresses the critical issue of material anisotropy in the X-cut TFLN platform. This proposed method fills the gap of inverse design of anisotropic materials based photonic devices, which finds prominent applications in TFLN platforms and other anisotropic-material based photonic integration platforms.

Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) light-emission diode (LED) has high practical potentials because of its advantages of variable wavelength, rapid sterilization, environmental protection, and miniaturization. Therefore, whether the emission wavelength has effects on the disinfection as well as whether the device is feasible to sterilize various respiratory RNA viruses under portable conditions is crucial. Here, we fabricate AlGaN-based DUV LEDs with different wavelength on high-temperature-annealed (HTA) AlN/Sapphire templates and investigate the inactivation effects for several respiratory RNA viruses. The AlN/AlGaN superlattices are employed between the template and upper n-AlGaN to release the strong compressive stress (SCS), improving the crystal quality and interface roughness. DUV LEDs with the wavelength of 256, 265, and 278 nm, corresponding to the light output power of 6.8, 9.6, and 12.5 mW, are realized, among which the 256 nm-LED shows the most potent inactivation effect in human respiratory RNA viruses, including SARS-CoV-2, influenza A virus (IAV), and human parainfluenza virus (HPIV), at a similar light power density (LPD) of ~0.8 mW/cm² for 10 s. These results will contribute to the advanced DUV LED application of disinfecting viruses with high potency and broad spectrum in a portable and eco-friendly use.